inchange semiconductor product specification silicon npn power transistors 2SD1061 description ? with to-220 package ? low collector saturation voltage ? wide aso(safe operating area) ? complement to type 2sb825 applications ? universal high current switching as solenoid driving, ? high speed inverter and converter. relay drivers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 7 a i cp collector current-peak 12 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1061 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;r be = ?t 50 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 60 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =4a, i b =0.4a 0.4 v i cbo collector cut-off current v cb =40v;i e =0 0.1 ma i ebo emitter cut-off current v eb =4v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =2v 70 280 h fe-2 dc current gain i c =5a ; v ce =2v 30 f t transition frequency i c =1a ; v ce =5v 10 mhz switching times t on turn-on time 0.2 | s t s storage time 0.9 | s t f fall time i c =2a i b1 =- i b2 =0.2a v cc =20v;r l =10 |? 0.3 | s ? h fe-1 classifications q r s 70-140 100-200 140-280
inchange semiconductor product specification 3 silicon npn power transistors 2SD1061 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SD1061
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